Datasheet4U Logo Datasheet4U.com

IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Download the IS66WV51216DBLL datasheet PDF. This datasheet also covers the IS66WV51216DALL variant, as both devices belong to the same 8mb low voltage ultra low power pseudo cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

words by 16 bits.

Key Features

  • High-speed access time:.
  • 70ns (IS66WV51216DALL, IS66/67WV51216DBLL).
  • 55ns (IS66/67WV51216DBLL).
  • CMOS low power operation.
  • Single power supply.
  • Vdd = 1.7V-1.95V (IS66WV51216 ALL).
  • Vdd = 2.5V-3.6V (IS66/67WV51216 BLL).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WV51216DALL-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI
IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JULY 2011 FEATURES • High-speed access time: – 70ns (IS66WV51216DALL, IS66/67WV51216DBLL) – 55ns (IS66/67WV51216DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V-1.95V (IS66WV51216 ALL) – Vdd = 2.5V-3.6V (IS66/67WV51216 BLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.