IS66WV51216EBLL Datasheet Ultra Low Power Pseudo CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IS66WV51216EBLL
Manufacturer	ISSI (now Infineon)
File Size	723.87 KB
Description	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet	IS66WV51216EBLL IS66WV51216EALL Datasheet (PDF)

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL ).
CMOS Lower Power Operation.
Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL ).
Three State Outputs.
Data Control for Upper and Lower bytes.
Lead-free Available.

Brand Logo	Part Number	Description	Manufacturer
	IS66WV51216DALL	8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM	Integrated Silicon Solution
	IS66WV51216DBLL	8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM	Integrated Silicon Solution

Part Number	Description
IS66WV51216EALL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DALL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WVC1M16ALL	16Mb Async/Page/Burst CellularRAM
IS66WVC2M16ALL	32Mb Async/Page/Burst CellularRAM
IS66WVC2M16EALL	32Mb Async/Page/Burst CellularRAM