Datasheet Summary
IS66WV51216EALL IS66/67WV51216EBLL
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
SEPTEMBER 2022
Features
- High-Speed access time :
- 70ns ( IS66WV51216EALL )
- 60ns (IS66/67WV51216EBLL )
- CMOS Lower Power Operation
- Single Power Supply
- VDD =1.7V~1.95V( IS66WV51216EALL )
- VDD =2.5V~3.6V (IS66/67WV51216EBLL )
- Three State Outputs
- Data Control for Upper and Lower bytes
- Lead-free Available
DESCRIPTION
The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields...
