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IS66WV51216BLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Download the IS66WV51216BLL datasheet PDF. This datasheet also covers the IS66WV51216ALL variant, as both devices belong to the same ultra low power pseudo cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

bit static RAMs organized as 512K words by 16 bits.

fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 55ns.
  • CMOS low power operation.
  • mW (typical) operating.
  • µW (typical) CMOS standby.
  • Single power supply.
  • 1.7V--1.95V Vdd (66WV51216ALL) (70ns).
  • 2.5V--3.6V Vdd (66WV51216BLL) (55ns).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WV51216ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS66WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS660 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS661 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS662 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby • Single power supply – 1.7V--1.95V Vdd (66WV51216ALL) (70ns) – 2.5V--3.6V Vdd (66WV51216BLL) (55ns) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.