Datasheet4U Logo Datasheet4U.com

IS66WV51216BLL Datasheet Ultra Low Power Pseudo CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time: 55ns.
  • CMOS low power operation.
  • mW (typical) operating.
  • µW (typical) CMOS standby.
  • Single power supply.
  • 1.7V--1.95V Vdd (66WV51216ALL) (70ns).
  • 2.5V--3.6V Vdd (66WV51216BLL) (55ns).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS66WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16EALL 32Mb Async/Page/Burst CellularRAM

IS66WV51216BLL Distributor