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IS66WV51216EALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

General Description

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

Key Features

  • High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216BLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )  CMOS Lower Power Operation  Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.