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IS66WV51216EALL Datasheet Ultra Low Power Pseudo CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER.

General Description

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

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