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IS66WVC1M16ALL - 16Mb Async/Page/Burst CellularRAM

General Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 16Mb DRAM core device is organized as 1 Meg x 16 bits.

Key Features

  • Single device supports asynchronous , page, and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16,32 or Continuous.
  • Low Power Consumption.
  • Asynchronous Operation < 25 mA.
  • Intrapage Read.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS66WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM
IS66WVC4M16ALL 64Mb Async/Page/Burst CellularRAM
IS66WVC4M16EALL 64Mb Async/Page/Burst CellularRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.