IS66WVC4M16EALL Overview
CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits.
IS66WVC4M16EALL Key Features
- Single device supports asynchronous , page, and burst operation
- Mixed Mode supports asynchronous write and synchronous read operation
- Dual voltage rails for optional performance
- ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
- CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
- Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
- Burst mode for Read and Write operation
- 4, 8, 16,32 or Continuous
- Low Power Consumption
- Asynchronous Operation < 30 mA