IS66WVC4M16ECLL - 64Mb Async/Page/Burst CellularRAM

This page provides the datasheet information for the IS66WVC4M16ECLL, a member of the IS66WVC4M16EALL 64Mb Async/Page/Burst CellularRAM family.

Product Overview

ISSI

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Datasheet Details

Part number	IS66WVC4M16ECLL
Manufacturer	ISSI
File Size	1.84 MB
Description	64Mb Async/Page/Burst CellularRAM
Datasheet	IS66WVC4M16ECLL Datasheet
Additional preview pages of the IS66WVC4M16ECLL datasheet.

IS66WVC4M16ECLL Product details

Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

Single device supports asynchronous , page, and burst operation.
Mixed Mode supports asynchronous write and synchronous read operation.
Dual voltage rails for optional performance.
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns.
Burst mode for Read and Write operation.
4, 8, 16,32 or Continuous.
Low Power Consumption.
Async.

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Published: Feb 17, 2024 |