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IS66WVO16M8EDBLL

Manufacturer: ISSI (now Infineon)

IS66WVO16M8EDBLL datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS66WVO16M8EDBLL datasheet preview

IS66WVO16M8EDBLL Datasheet Details

Part number IS66WVO16M8EDBLL
Datasheet IS66WVO16M8EDBLL IS66WVO16M8EDALL Datasheet (PDF)
File Size 940.18 KB
Manufacturer ISSI (now Infineon)
Description 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WVO16M8EDBLL page 2 IS66WVO16M8EDBLL page 3

IS66WVO16M8EDBLL Overview

The IS66/67WVO16M8EDALL/BLL are integrated memory device containing 128Mb Pseudo Static Random Access Memory with On-chip ECC, using a self-refresh DRAM array organized as 16M words by 8 bits. The device supports Octal Peripheral Interface (Address, mand, and Data through 8 SIO pins), Very Low Signal Count (11 signal pins; SCLK, CS#, DQSM, and 8 SIOs)+ optional ERR signal, Hidden Refresh Operation, and Automotive...

IS66WVO16M8EDBLL Key Features

  • Industry Standard Serial Interface
  • Octal Peripheral Interface (OPI) Protocol
  • Low Signal Counts :11 Signal pins (CS#, SCLK, DQSM, SIO0~SIO7)+ optional ERR output
  • High Performance
  • On chip ECC (chunk size = 4 bit): 1-bit correction and 2-bit detection
  • Double Transfer Rate (DTR) Operation
  • Up to 166MHz (333MB/s)
  • Source Synchronous Output signal during Read Operation (DQSM)
  • Data Mask during Write Operation (DQSM)
  • Configurable Latency for Read/Write Operation)
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IS66WVO16M8EDBLL Distributor

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