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IS66WVQ16M4FALL - 1.8V/3.0V SERIAL PSRAM MEMORY

General Description

The IS66/67WVQ16M4FALL/BLL are integrated memory device containing 64Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 16M words by 4 bits.

The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash.

Key Features

  • Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
  • High Performance - Double Data Rate (DDR) Operation: 200MHz (200MB/s) - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode and Fixed Latency mode - Configurable Dr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WVQ16M4FALL/BLL IS67WVQ16M4FALL/BLL 64Mb QUADRAM 1.8V/3.