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IS67WVC1M16ALL Datasheet 16mb Async/page/burst Cellularram

Manufacturer: ISSI (now Infineon)

Overview: IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Single device supports asynchronous , page, and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16,32 or Continuous.
  • Low Power Consumption.
  • Asynchronous Operation < 25 mA.
  • Intrapage Read.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM
IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM
IS67WVC4M16EALL 64Mb Async/Page/Burst CellularRAM
IS67WVC4M16ECLL 64Mb Async/Page/Burst CellularRAM
IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WVE1M16EALL 16Mb Async/Page PSRAM
IS67WVE1M16EBLL 16Mb Async/Page PSRAM
IS67WVE1M16ECLL 16Mb Async/Page PSRAM

IS67WVC1M16ALL Distributor