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IS67WVC1M16ALL

Manufacturer: ISSI (now Infineon)

IS67WVC1M16ALL datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS67WVC1M16ALL datasheet preview

IS67WVC1M16ALL Datasheet Details

Part number IS67WVC1M16ALL
Datasheet IS67WVC1M16ALL IS66WVC1M16ALL Datasheet (PDF)
File Size 1.04 MB
Manufacturer ISSI (now Infineon)
Description 16Mb Async/Page/Burst CellularRAM
IS67WVC1M16ALL page 2 IS67WVC1M16ALL page 3

IS67WVC1M16ALL Overview

CellularRAMâ„¢ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 16Mb DRAM core device is organized as 1 Meg x 16 bits. This device is a variation of the industry-standard Flas.

IS67WVC1M16ALL Key Features

  • Single device supports asynchronous , page, and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
  • Burst mode for Read and Write operation
  • 4, 8, 16,32 or Continuous
  • Low Power Consumption
  • Asynchronous Operation < 25 mA
  • Intrapage Read < 18mA
ISSI (now Infineon) logo - Manufacturer

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