IS67WVC4M16ALL - 64Mb Async/Page/Burst CellularRAM

Product Overview

ISSI

Datasheet Details

Part number	IS67WVC4M16ALL
Manufacturer	ISSI
File Size	706.63 KB
Description	64Mb Async/Page/Burst CellularRAM
Datasheet	IS67WVC4M16ALL Datasheet
Note	This datasheet PDF includes multiple part numbers: IS67WVC4M16ALL, IS66WVC4M16ALL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS67WVC4M16ALL datasheet.

Product details

Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

Single device supports asynchronous , page, and burst operation.
Mixed Mode supports asynchronous write and synchronous read operation.
Dual voltage rails for optional performance.
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns.
Burst mode for Read and Write operation.
4, 8, 16,32 or Continuous.
Low Power Consumption.
Asynchronous Operation < 25 mA.
Intrapage Read.

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Published: Jun 9, 2016 |