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IS67WVE4M16EALL - 64Mb Async/Page PSRAM

This page provides the datasheet information for the IS67WVE4M16EALL, a member of the IS66WVE4M16EALL 64Mb Async/Page PSRAM family.

Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 55ns, 70ns.
  • Intrapage Read access : 20ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 23mA.
  • Standby < 200 uA (max. ).
  • Deep power-down (DPD).
  • ALL/CLL: < 3µA (Typ.

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Datasheet preview – IS67WVE4M16EALL

Datasheet Details

Part number IS67WVE4M16EALL
Manufacturer ISSI
File Size 586.58 KB
Description 64Mb Async/Page PSRAM
Datasheet download datasheet IS67WVE4M16EALL Datasheet
Additional preview pages of the IS67WVE4M16EALL datasheet.

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Full PDF Text Transcription

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IS66WVE4M16EALL/BLL/CLL IS67WVE4M16EALL/BLL/CLL 64Mb Async/Page PSRAM PRELIMINARY INFORMATION Overview The IS66/67WVE4M16EALL/BLL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  CLL: VDD 1.7V~1.
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