IS67WVE4M16TBLL Datasheet | ISSI

Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features - Asynchronous and page mode interface - Dual voltage rails for optional performance - ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V - BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V - CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V - Page mode read access - Interpage Read access : 60ns, 70ns - Intrapage Read access : 25ns - Low Power Consumption - Asynchronous Operation <...