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IV2Q12080T4Z - 1200V Gen2 Automotive SiC MOSFET

Features

  • Outline:.
  • 2nd Generation SiC MOSFET Technology with +15V~+18V gate drive.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitance.
  • 175ā„ƒ operating junction temperature capability.
  • Ultra fast and robust intrinsic body diode.
  • Kelvin gate input easing driver circuit design.
  • AEC-Q101 qualified TO247-4.

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Datasheet Details

Part number IV2Q12080T4Z
Manufacturer IVCT
File Size 1.99 MB
Description 1200V Gen2 Automotive SiC MOSFET
Datasheet download datasheet IV2Q12080T4Z Datasheet
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Full PDF Text Transcription

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IV2Q12080T4Z ā€“ 1200V 80mĪ© Gen2 Automotive SiC MOSFET Jun.
Published: |