IV2Q12080T4Z Description
IV2Q12080T4Z 1200V 80mΩ Gen2 Automotive SiC MOSFET Jun.
IV2Q12080T4Z Key Features
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- 175℃ operating junction temperature capability
- Ultra fast and robust intrinsic body diode
- Kelvin gate input easing driver circuit design
- AEC-Q101 qualified