DE275X2-501N16A Description
The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. Unless noted, specifications are for each output device Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS (1) (1) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
DE275X2-501N16A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductan
- High Performance Push-Pull RF
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density