DE275X2-501N16A
Overview
- Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power *
- - - * *
- cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances RthJHS (1) TJ TJM Tstg TL Weight Symbol Test Conditions
- 6mm (0.063 in) from case for 10 s 300 4 Characteristic Values TJ = 25°C unless otherwise specified Advantages
- High Performance Push-Pull RF Package min. VDSS GS(th) typ. max. V 5.5 ±100 V nA VGS = 0 V, ID = 3 ma 500 2.5
- Optimized for RF and high speed switching at frequencies to >65MHz VDS = VGS, ID = 4 ma V
- Easy to mount-no insulators needed
- High power density Note: All specifications are
