Overview: Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦ DE275X2-501N16A
RF Power MOSFET
Preliminary Data Sheet IXYS pany mon Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 500 V 16 A 0.5 Ω 750 W The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a mon source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
Unless noted, specifications are for each output device Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS
(1) (1) Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C Maximum Ratings 500 500 ±20 ±30 16 96 16 20 5 >200 750 5.0 0.
