Datasheet Summary
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
VDSS ID25
Maximum Ratings 1000 1000 ±20 ±30 10 60 10 30 5 >200 940 425 4.5 0.16 0.23 Characteristic Values min. typ. V V V V A A A mJ V/ns V/ns W W W C/W C/W
Features
TJ = 25°C unless otherwise specified
SG1 SG2 GATE
= = = =
1000 V 10 A 1.2 Ω 940 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,...