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♦ N-Channel Enhancement Mode ♦ Low Qg and Rg ♦ High dv/dt ♦ Nanosecond Switching ♦ 50MHz Maximum Frequency
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
DE375-102N12A
RF Power MOSFET
Maximum Ratings 1000 V 1000 V ±20 V ±30 V 12 A 72 A 12 A 30 mJ 5 V/ns
>200 V/ns
VDSS = 1000 V
ID25
= 12 A
RDS(on) = 0.95 Ω
PDC
= 940 W
PDC PDHS PDAMB RthJC RthJHS Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
gfs TJ TJM Tstg TL Weight
Tc = 25°C Derate 3.7W/°C above 25°C
Tc = 25°C
940 W
425
W GATE
4.5 W
DRAIN
0.16 C/W 0.
DE375-102N12A Datasheet
