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DE375-102N12A Datasheet

Manufacturer: IXYS (now Littelfuse)
DE375-102N12A datasheet preview

Datasheet Details

Part number DE375-102N12A
Datasheet DE375-102N12A-IXYS.pdf
File Size 153.42 KB
Manufacturer IXYS (now Littelfuse)
Description RF Power MOSFET
DE375-102N12A page 2 DE375-102N12A page 3

DE375-102N12A Overview

♦ N-Channel Enhancement Mode ♦ Low Qg and Rg ♦ High dv/dt ♦ Nanosecond Switching ♦ 50MHz Maximum Frequency Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.

DE375-102N12A Key Features

  • Isolated Substrate
  • high isolation voltage (>2500V)
  • excellent thermal transfer
  • Increased temperature and power
  • IXYS advanced low Qg process
  • Low gate charge and capacitances
  • easier to drive
  • faster switching
  • Low RDS(on)
  • Very low insertion inductance (<2nH)
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Part Number Description

DE375-102N12A Distributor

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