Datasheet Summary
RF Power MOSFET
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- N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
VDSS ID25
Maximum Ratings 500 500 ±20 ±30 25 150 21 30 5 >200 940 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = = =
500 V 25 A 0.22 Ω 940 W
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol
RDS(on) PDC
DRAIN
Tc = 25°C Derate 3.7W/°C above 25°C Tc = 25°C
425 4.5 0.16...