DE475-102N21A Description
DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
DE475-102N21A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RD
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density