DE475-501N44A Description
Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A RF Power MOSFET Preliminary Data Sheet IXYS pany N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 44 264 44 30.
DE475-501N44A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductan
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density