DE475-501N44A Datasheet | IXYS

Directed Energy, Inc. An - - - - - DE475-501N44A RF Power MOSFET Preliminary Data Sheet IXYS pany N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 44 264 44 30 5 >200 600 4.5 -55…+150 150 -55…+150 V V V V A A A m J V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 44 A 0.14 Ω 600W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C PDHS DRAIN SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 3 - Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power - - - -...