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DSEP130-06A - Epitaxial Diode

Key Features

  • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information DSEP 130-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 130 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V 600 Type TO-247 AD DSEP130-06A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 70°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.8 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 130 1000 0.4 0.2 -55...+175 175 -55...