IXBH16N170A Description
+150 300 260 V V V V A A A A V ms W °C °C °C °C °C g g TO-268 (IXBT) G E TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXBH16N170A Key Features
- Monolithic fast reverse diode
- High Blocking Voltage
- JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
- Low switching losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Molding epoxies meet UL 94 V-0 flammability classification