IXBH16N170A - Bipolar MOS Transistor

IXYS (now Littelfuse)

Key Features

Monolithic fast reverse diode.
High Blocking Voltage.
JEDEC TO-268 surface mount and JEDEC TO-247 AD packages.
Low switching losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-2.

IXBH16N170A bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBH16N170A
Manufacturer	IXYS (now Littelfuse)
File Size	51.85 KB
Description	Bipolar MOS Transistor
Datasheet	IXBH16N170A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXBH16N170	BIMOSFET Monolithic Bipolar MOS Transistor	IXYS
IXBH12N300	Bipolar MOS Transistor	IXYS
IXBH14N300HV	Bipolar MOS Transistor	IXYS
IXBH20N300	Bipolar MOS Transistor	IXYS
IXBH20N360HV	Monolithic Bipolar MOS Transistor	IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXBH10N170	Bipolar MOS Transistor
IXBH15N140	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH15N160	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH40N140	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH42N170	Monolithic Bipolar MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 W non repetitive TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ... +150 150 -55 ...