IXYS IXBH16N170
BIMOSFET Monolithic Bipolar MOS Transistor
| Part No. | IXBH16N170 |
|---|---|
| Datasheet | IXBH16N170 Download |
| Manufacturer |  IXYS |
| Description | BIMOSFET Monolithic Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
1700 1700 V V ± 20 ± 30 V V 40 A 16 A 120 A ICM = 40 VCES ≤ 1350 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VVGCEE = = 0.8 0V● VCES IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 16A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 V 3.0 5.5 V TJ = 125°C 50 μA 2 mA ±100 nA TJ = 125°C 3.3 V 3.2 V TO-247 (IXBH) G CE TO-268 (IXBT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector
FEATURES
z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power densityAPPLICATIONS
: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98657B(10/08) Symbol Test Conditions (TJ = 25°...
