IXBL64N250 Description
8g GE C Isolated Tab G = Gate E = Emitter C = Collector.
IXBL64N250 Key Features
- VCES, VGE = 0V Note 2, TJ = 125°C
IXBL64N250 is Monolithic Bipolar MOS Transistor manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXBD4410 | Half Bridge Driver Chipset |
| IXBD4411 | Half Bridge Driver Chipset |
| IXBF9N140 | High Voltage BIMOSFET |
| IXBF9N140 | Power MOSFET |
| IXBF9N160 | High Voltage BIMOSFET |
8g GE C Isolated Tab G = Gate E = Emitter C = Collector.