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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH42N170 IXBT42N170
VCES = IC90 = VCE(sat) ≤
1700V 42A 2.8V
Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
1700 1700
V V
± 20 ± 30
V V
80 A 75 A 42 A 300 A
ICM = 100 VCES ≤ 1350
360
A V W
-55 ... +150 150
-55 ... +150
°C °C °C
300 260
1.13/10
°C °C
Nm/lb.in.
IXBT42N170 Datasheet
