Datasheet4U Logo Datasheet4U.com

IXDP20N60B - High Voltage IGBT

Features

  • VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V.
  • NPT IGBT technology 600 V.
  • low switching losses.
  • low tail current ±20 V.
  • no latch up VGEM IC25 Transient TC = 25°C ±30 V.
  • short circuit capability 32 A.
  • positive temperature coefficient for easy paralleling IC90 TC = 90°C 20 A.
  • MOS input, voltage controlled ICM TC = 90°C, tp =1 ms 40 A.
  • optional ultra fast diode.
  • International standard package.

📥 Download Datasheet

Datasheet preview – IXDP20N60B

📁 Similar Datasheet

  • IXDP20N60BD1 - High Voltage IGBT (IXYS)
  • IXDP630 - Inverter Interface and Digital Deadtime Generator (IXYS)
  • IXDP630PI - Inverter Interface and Digital Deadtime Generator (IXYS)
  • IXDP631 - Inverter Interface and Digital Deadtime Generator (IXYS)
  • IXDP631PI - Inverter Interface and Digital Deadtime Generator (IXYS)
  • IXD1209 - High Speed LDO Regulator (IXYS)
  • IXD1212 - High Speed LDO Regulator (IXYS)
  • IXD1504 - 0.6uA Current Consumption Voltage Regulator (IXYS)
  • IXD1701 - 28V Input High Speed Voltage Regulator (IXYS)
  • IXD5121 - Voltage Detector (IXYS)
Other Datasheets by IXYS Corporation
  • IXDP35N60B - IGBT with optional Diode
  • IXDP610 - Bus Compatible Digital PWM Controller
  • IXDA20N120AS - High Voltage IGBT
  • IXDD404 - 4 Amp Dual Low-Side Ultrafast MOSFET Driver
  • IXDD404PI - 4 Amp Dual Low-Side Ultrafast MOSFET Driver
  • IXDD404SI - 4 Amp Dual Low-Side Ultrafast MOSFET Driver
  • IXDD404SI-16 - 4 Amp Dual Low-Side Ultrafast MOSFET Driver
  • IXDD404SIA - 4 Amp Dual Low-Side Ultrafast MOSFET Driver

Full PDF Text Transcription

Click to expand full text
IXDP20N60B High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage Replacement IXYP20N65B3 VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.
Published: |