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IXDP20N60B - High Voltage IGBT

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IXYS Corporation

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IXDP20N60B High Voltage IGBT by IXYS Corporation - Datasheet Preview — Datasheet preview – IXDP20N60B

Datasheet Details

Part number	IXDP20N60B
Manufacturer	IXYS Corporation
File Size	209.84 KB
Description	High Voltage IGBT
Datasheet	IXDP20N60B Datasheet
Additional preview pages of the IXDP20N60B datasheet.

Product details

Features

VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V.
NPT IGBT technology 600 V.
low switching losses.
low tail current ±20 V.
no latch up VGEM IC25 Transient TC = 25°C ±30 V.
short circuit capability 32 A.
positive temperature coefﬁcient for easy paralleling IC90 TC = 90°C 20 A.
MOS input, voltage controlled ICM TC = 90°C, tp =1 ms 40 A.
optional ultra fast diode.
International standard package.

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Published: Aug 11, 2008 |