IXDP20N60B Description
IXDP20N60B High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage Replacement IXYP20N65B3 VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220 AB G G C E E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol Conditions Maximum Ratings.
IXDP20N60B Key Features
- NPT IGBT technology
- low switching losses
- low tail current
- no latch up
- short circuit capability
- positive temperature coefficient for easy paralleling
- MOS input, voltage controlled
- optional ultra fast diode
- International standard package
- Weight