IXDP20N60B
IXDP20N60B is High Voltage IGBT manufactured by IXYS.
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
Replacement IXYP20N65B3
VCES = 600 V
IC25
= 32 A
V = CE(sat) typ 2.2 V
C TO-220 AB
C (TAB)
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Symbol
Conditions
Maximum Ratings Features
VCES VCGR VGES
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous
- NPT IGBT technology
- low switching losses
- low tail current
±20
- no latch up
VGEM IC25
Transient TC = 25°C
±30
- short circuit capability
- positive temperature coefficient for easy paralleling
IC90
TC = 90°C
- MOS input, voltage controlled
TC = 90°C, tp =1...
