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IXDP20N60BD1 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

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Overview

IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.

Key Features

  • VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode TJ E Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s S Md Weight Mounting torque 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES 1.

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