IXDP20N60BD1 - High Voltage IGBT

Product Overview

IXYS

Part number	IXDP20N60BD1
Manufacturer	IXYS
File Size	757.29 KB
Description	High Voltage IGBT
Datasheet	IXDP20N60BD1 Datasheet
Additional preview pages of the IXDP20N60BD1 datasheet.

VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode TJ E Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s S Md Weight Mounting torque 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES 1.

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Published: Feb 9, 2025 |