IXDP20N60BD1 Description
IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220 AB Replacements: G G IXYP15N65C3D1 / IXXP12N65B4D1 E C E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol Conditions Maximum Ratings.
IXDP20N60BD1 Key Features
- 55 ... +150 -40 ... +150
- NPT IGBT technology
- low switching losses
- low tail current
- no latch up
- short circuit capability
- positive temperature coefficient for easy paralleling
- MOS input, voltage controlled
- optional ultra fast diode
- International standard package