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IXDP20N60BD1 - High Voltage IGBT

Features

  • VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode TJ E Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s S Md Weight Mounting torque 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES 1.

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Full PDF Text Transcription

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IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220 AB Replacements: G G IXYP15N65C3D1 / IXXP12N65B4D1 E C E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol Conditions Maximum Ratings Features VCES VCGR VGES VGEM T IC25 IC90 ICM U RBSOA TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC O (SCSOA) - PC VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode TJ E Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.
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