IXDP20N60BD1
IXDP20N60BD1 is High Voltage IGBT manufactured by IXYS.
IXDP 20N60B D1
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V
IC25
= 32 A
V = CE(sat) typ 2.2 V
TO-220 AB
Replacements:
IXYP15N65C3D1 / IXXP12N65B4D1 E
C (TAB)
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Symbol
Conditions
Maximum Ratings Features
VCES VCGR VGES VGEM
T IC25
IC90 ICM
U RBSOA
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous
Transient
TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH t SC
O (SCSOA)
- PC
VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive
TC = 25°C
IGBT Diode
E Tstg
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10...
