IXFA16N50P Datasheet | IXYS

Advance Technical Information .. Polar HVTM Hi Per FET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS(on) trr = 500 V = 16 A = 400 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ±30 ± 40 16 35 16 25 750 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A m J m J V/ns W °C °C °C °C °C TO-220 (IXTP) (TAB) TO-263 (IXTA) S (TAB) TO-247 (IXFH) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 TO-247 (TO-247 & TO-220) 300 260 S D (TAB) Md Weight 1.13/10 Nm/lb.in. 4 3 5.5 g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 V V n A µA µA G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 400 m...