IXFA3N120 Datasheet | IXYS

Features z 1.13/10 Nm/lb.in. 4 2 g g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V n A µA m A Ω z Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 m A VDS = VGS, ID = 1.5 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved DS99036B(07/04) IXFA 3N120 IXFP 3N120 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.5 2.5 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 100 25 17 VGS = 10 V, VDS = 0.5 - VDSS, ID = 0.5 - ID25 RG = 4.7 Ω (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 - VDSS, ID = 0.5 - ID25 9 22 0.62 (TO-220) 0.25 S p F p F p F ns ns ns ns n C n C n C K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 (IXFP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK VDS = 20 V; ID = 0.5 - ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 12 1.5 300 A A V ns µC A 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TO-263 (IXFA) Outline IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.4 1.2 Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045...