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www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class
IXFA 4N100Q IXFP 4N100Q
VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.13/10 4 2 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in.
IXFA4N100Q Datasheet
