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IXFA6N120P - Power MOSFET

This page provides the datasheet information for the IXFA6N120P, a member of the IXFP6N120P Power MOSFET family.

Features

  • International Standard Packages.
  • Dynamic dv/dt Rating.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low QG & RDS(on).
  • Low Drain-to-Tab Capacitance.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 6 18 3 300 10 250 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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