IXFC80N08
Overview
- 6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300
- .65/2.4..11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier
