IXFC80N085 Description
+150 V V V V A A A A mJ J V/ns W °C °C °C °C l l l l l G D S G = Gate, S = Source Patent pending Isolated back surface D = Drain,.
IXFC80N085 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Uncla