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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFC 80N08 IXFC 80N085 80 V 85 V
ID25
RDS(on)
80 A 9 mΩ 80 A 9 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings ISOPLUS 220TM 80N08 80N085 80 85 ± 20 ± 30 80 80 75 320 30 1.0 5 230 -55 ... +150 150 -55 ...
IXFC80N085 Datasheet
