IXFE55N50 Datasheet | IXYS

Features - Low cost direct-copper bonded aluminium package - Encapsulating epoxy meets UL 94 V-0, flammability classification - 2500V isolation - Low drain to case capacitance - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - Fast intrinsic Rectifier - Conforms to SOT-227B outline Applications - DC-DC converters - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - Temperature and lighting controls Advantages - Easy to mount - Space savings - High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, ID = IT Note 2 Min. 500 2.5 Characteristic Values Typ. Max. V 4.5 ± 100 V n A TJ = 25°C TJ = 125°C 55N50 50N50 400 µA 2 m A 80 m Ω 100 m Ω © 2002 IXYS All rights reserved 98904 (2/02) IXFE 55N50 IXFE 50N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK 0.07 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT VGS = 10 V, VDS = 0.5 - VDSS, ID = IT RG = 1 Ω (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = IT, Note 2 Characteristic Values Min. Typ. Max. 45 9400 1200 460 45 60 120 45 330 55 185 0.25 S p F p F p F ns ns ns ns n C n C n C K/W K/W ISOPLUS-227 B Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM VGS = 0 Repetitive; pulse width limited by TJM 55N50 50N50 55N50 50N50 Characteristic Values Min. Typ. Max. 55 50 220 200 1.3 180 30 2 8 A A A A V ns ns µC A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I F = IS, -di/dt = 100 A/ µ s, V R = 100 V TJ = 25°C TJ = 25°C TJ = 25°C Please see IXFN55N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IXFE55N50: IT...