IXFE80N50 Datasheet | IXYS

Features - Conforms to SOT-227B outline - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) - Low package inductance - Fast intrinsic Rectifier Applications - DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 4 ± 200 100 2 55 V V n A µA m A mΩ - Battery chargers - Switched-mode and resonant-mode - DC choppers - Temperature and lighting controls power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = IT Note 2 Advantages - Low cost - Easy to mount - Space savings - High power density © 2002 IXYS All rights reserved 98898A (5/02) IXFE 80N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 50 70 9890 VGS = 0 V, VDS = 25 V, f = 1 MHz 1750 460 61 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT RG = 1 Ω (External), 70 102 27 380 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT 80 173 0.22 0.07 S p F p F p F ns ns ns ns n C n C n C K/W K/W ISOPLUS-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK VDS = 15 V; ID = IT, Note 2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.3 250 1.2 8 A A V ns µC A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs, VR = 100 V Please see IXFN80N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IT = 40 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:...