IXFE80N50 Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 2500 3000 V V V V A ISOPLUS 227TM (IXFE) S G S A A mJ J V/ns W °C °C °C V~ V~ G = Gate S = Source D D =...
IXFE80N50 Key Features
- Conforms to SOT-227B outline
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- Fast intrinsic Rectifier