IXFG55N50 Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ ISO264TM G D S (TAB) G = Gate S = Source D = Drain.
IXFG55N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell