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HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM
(Electrically Isolated Back Surface) Single Die MOSFET
VDSS ID25 RDS(on)
= 500 V = 48 A = 90 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ± 20 ± 30 48 220 55 60 3 5 400 -40 ... +150 150 -40 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~
ISO264TM
G D S
(TAB)
G = Gate S = Source
D = Drain
Features
z
z z z z
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min
300 2500
0.
IXFG55N50 Datasheet
