IXFH10N100 Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g G = Gate, S = Source, D G D = Drain, TAB = Drain.
IXFH10N100 Key Features
- easy to drive and to protect z Fast intrinsic Rectifier
- VDSS VGS = 0 V