Overview: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 VDSS
1000 V 1000 V ID25
10 A 12 A RDS(on)
1.20 Ω 1.05 Ω trr ≤ 250 ns Maximum Ratings TO-247 AD (IXFH) VDSS VDGR VGS VGSM ID25
IDM
IAR
EAR dv/dt
PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient 1000 V 1000 V ±20 V ±30 V (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque 10N100 10 12N100 12 10N100 40 12N100 48 10N100 10 12N100 12 30 A A A A TO-204 AA (IXFM)
A Package not A available
mJ 5 V/ns . 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.
