IXFH10N100
IXFH10N100 is Power MOSFET manufactured by IXYS.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
IXFH/IXFM 10 N100 IXFH/IXFM 12 N100
VDSS
1000 V 1000 V
ID25
10 A 12 A
RDS(on)
1.20 Ω 1.05 Ω trr ≤ 250 ns
Maximum Ratings TO-247 AD (IXFH)
VDSS VDGR VGS VGSM ID25
EAR dv/dt
PD TJ TJM Tstg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
±20
±30
(TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
10N100
12N100
10N1...
