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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 13 N50 IXFM 13 N50
VDSS ID (cont) RDS(on) trr
= 500 V = 13 A = 0.4 W £ 250 ns
Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
Symbol
V DSS
VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
500
V
500
V
±20
V
±30
V
13
A
52
A
13
A
18
mJ
5
V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
IXFH13N50 Datasheet
