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IXFH150N15P - Power MOSFET

Download the IXFH150N15P datasheet PDF. This datasheet also covers the IXFK150N15P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z Maximum Ratings 150 150 ± 20 ± 30 150 75 340 60 80 2.5 10 V V G V V A A A A mJ J V/ns G D D S (TAB) TO-264(SP) (IXTK) D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.13/10 Nm/lb. in. 5.5 10 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK150N15P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH150N20T N-Channel MOSFET INCHANGE
IXFH150N20T Power MOSFET IXYS
IXFH15N100 HiPerFET Power MOSFETs IXYS
IXFH15N80Q N-Channel 800V Power MOSFET VBsemi
IXFH100N25P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH150N17T Power MOSFET
IXFH150N17T2 Power MOSFET
IXFH15N100P Power MOSFET
IXFH15N100Q HiPerFET Power MOSFETs
IXFH15N100Q3 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A RDS(on) ≤ 13 mΩ TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C 714 -55 ... +175 175 -55 ... +175 300 W °C °C °C °C Features z z Maximum Ratings 150 150 ± 20 ± 30 150 75 340 60 80 2.