IXFH15N60 Datasheet | IXYS

Hi Per FETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A 20 A RDS(on) 0.50 W 0.35 W trr £ 250 ns .. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 15N60 20N60 15N60 20N60 15N60 20N60 Maximum Ratings 600 600 ±20 ±30 15 20 60 80 15 20 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A m J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features - International standard packages - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect - Fast intrinsic Rectifier Applications - DC-DC converters - Synchronous rectification - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - AC motor...