Datasheet4U Logo Datasheet4U.com

IXFH160N15T - Power MOSFET

Key Features

  • z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH160N15T N-Channel MOSFET INCHANGE
IXFH160N15T2 N-Channel MOSFET INCHANGE
IXFH160N15T2 Power MOSFET IXYS
IXFH16N90 HiPerFET Power MOSFETs IXYS
IXFH16N90Q Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH16N120P Power MOSFET
IXFH16N50P Polar MOSFET
IXFH16N80P Power MOSFET
IXFH102N15T Power MOSFET
IXFH10N100 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum 150 150 ± 30 160 75 430 5 1 10 830 -55 ... +175 175 -55 ... +175 Ratings V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g TO-247 (IXFH) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.