Overview: Advance Technical Information HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A = 190mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg
..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings
(TAB) 500 500 ± 20 ± 30 28 112 28 35 1.5 10 315 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) TL 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 300 Md Weight 1.13/10 Nm/lb.in.
