IXFH400N075T2
IXFH400N075T2 is Power MOSFET manufactured by IXYS.
Advance Technical Information
Trench T2TM Hiper FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH400N075T2 IXFT400N075T2
VDSS ID25
RDS(on)
= 75V = 400A ≤ 2.3mΩ
TO-247 (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 75 75 ± 20 ± 30 400 160 1000 200 1.5 15 1000 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g
D (Tab)
TO-268 (IXFT) G S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features z z
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13 / 10 6 4 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25
International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2
V V n A μA z z
Easy to Mount Space Savings High Power Density
Applications z z z
1.5 m A 2.3 mΩ
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
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© 2009 IXYS CORPORATION, All Rights Reserved
DS100221(12/09)
IXFH400N075T2...
