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IXFH400N075T2 - Power MOSFET

Key Features

  • z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ± 20V, V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH400N075T2 IXFT400N075T2 VDSS ID25 RDS(on) = 75V = 400A ≤ 2.3mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 75 75 ± 20 ± 30 400 160 1000 200 1.5 15 1000 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g G D S D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z 1.