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HiPerFETTM Power MOSFETs Q2-Class
IXFH40N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
VDSS = 500V
ID25
= 40A
RDS(on) ≤ 160mΩ
trr
≤ 250ns
TO-247 (IXFH)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt
PD TJ TJM Tstg TL Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.063 in) from case for 10s Mounting torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS VGS(th)
VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.
IXFH40N50Q2 Datasheet
