IXFH52N30Q Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; 6 10 4 g g g G = Gate S = Source G D S D (TAB) TAB = Drain.
IXFH52N30Q Key Features
- Low gate charge
- International standard packages
- Epoxy meet UL 94 V-0, flammability classification
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Avalanche energy and current rated
- Fast intrinsic Rectifier Advantages
- Easy to mount
- Space savings
- High power density
