IXFH52N30P
IXFH52N30P is PolarHT HiPerFET Power MOSFET manufactured by IXYS.
Advanced Technical Information
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 52N30P IXFV 52N30P IXFV 52N30PS
VDSS ID25 trr
RDS(on)
.. = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transinet TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 52 150 52 30 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C...
