IXFH52N30P Overview
Advanced Technical Information PolarHTTM HiPerFET Power MOSFET z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain
IXFH52N30P Key Features
- easy to drive and to protect Fast intrinsic diode
- Gate 3
- Source 2
- Drain TAB
