IXFH52N30P Description
Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV 52N30PS VDSS ID25 trr RDS(on) .. = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXFH52N30P Key Features
- easy to drive and to protect Fast intrinsic diode
- Gate 3
- Source 2
- Drain TAB