IXFH52N50P2
IXFH52N50P2 is N-Channel Power MOSFET manufactured by IXYS.
Polar2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH52N50P2 IXFT52N50P2
VDSS = ID25 =
RDS(on) ≤
500V 52A 120mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
± 30
± 40
V/ns
-55 ... +150
°C
°C
-55 ......
