Click to expand full text
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA6N120P IXFP6N120P IXFH6N120P
Symbol VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD FC Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
1200
V
1200
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
6 18
3 300
10 250 -55 ... +150 150 -55 ... +150
A A
A mJ
V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5
g
3.0
g
6.
IXFH6N120P Datasheet
