IXFH6N120P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFH6N120P FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VG

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