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IXFH76N06-12 - Power MOSFET

Download the IXFH76N06-12 datasheet PDF. This datasheet also covers the IXFH76N06-11 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH76N06-11_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V ID25 76 A 76 A 76 A 76 A RDS(on) 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 10 kW Continuous Transient TC TC TC TC = 25°C (Chip capability = 125 A) = 119°C, limited by external leads = 25°C, pulse width limited by TJM = 25°C N06 N07 N06 N07 Maximum Ratings 60 70 60 70 ±20 ±30 76 76 304 100 30 2 5 360 -55 ... +175 175 -55 ...